SPECIFIC-HEAT STUDY OF FE-BASED NARROW-GAP AND WIDE-GAP DILUTED MAGNETIC SEMICONDUCTORS

被引：2

作者：

DEJONGE, WJM

SWAGTEN, HJM

GERRITS, CEP

TWARDOWSKI, A

机构：

[1] Dept. of Phys., Eindhoven Univ. of Technol.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷

关键词：

D O I：

10.1088/0268-1242/5/3S/059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The specific heat of II-IV group Fe-based DMS has been investigated at temperatures below 20 K. All zero- and open-gap compounds have a magnetically inactive singlet ground state, well separated from the excited states. Within a crystal field model one is in principle able to understand this behaviour in all cases. The Fe2+-Fe2+ interaction and the role of the Fe levels in the band structure will be discussed.

引用

页码：S270 / S273

页数：4

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