PHOTOLITHOGRAPHY SYSTEM USING ANNULAR ILLUMINATION

被引：65

作者：

KAMON, K

MIYAMOTO, T

MYOI, Y

NAGATA, H

TANAKA, M

HORIE, K

机构：

[1] MITSUBISHI ELECTR CO,MFG DEV LAB,AMAGASAKI,HYOGO 661,JAPAN

[2] MITSUBISHI ELECTR CO,KITAITAMI WORKS,ITAMI,HYOGO 664,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 11B期

关键词：

LSI; PHOTOLITHOGRAPHY; ANNULAR ILLUMINATION; PHASE SHIFT MASK; RESOLUTION; DEPTH OF FOCUS; MULSS;

D O I：

10.1143/JJAP.30.3021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photolithography is a leading technique in LSI device fabrication. The LSI pattern size has approached the exposure wavelength such as the g or i-line of a Hg lamp. This fact indicates that the shorter wavelength or some novel technique will be needed in order to cope with finer patterns. It is known that annular illumination can improve the depth of focus and resolution. We applied the annular illumination method to the step and repeat exposure system. Experiments and simulations using annular illumination were carried out and subhalf-micron patterns were produced. The process latitudes of the annular illumination method are evaluated.

引用

页码：3021 / 3029

页数：9