THE SPATIAL-DISTRIBUTION OF SI INTERSTITIAL COMPLEX PRODUCED IN SILICON BY HYDROGEN-ION IMPLANTATION

被引：11

作者：

GORELKINSKII, YV

NEVINNYI, NN

BOTVIN, VA

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 49卷 / 1-3期

关键词：

D O I：

10.1080/00337578008243086

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：161 / 164

页数：4

共 15 条

[1] EPR OF A [001] SI INTERSTITIAL COMPLEX IN IRRADIATED SILICON [J].

BROWER, KL .

PHYSICAL REVIEW B, 1976, 14 (03) :872-883

[2] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J].

CORBETT, JW ;

WATKINS, GD .

PHYSICAL REVIEW, 1965, 138 (2A) :A555-&

[3] NEW EPR SPECTRA IN IRRADIATED SILICON [J].

DALY, DF .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :864-&

[4]

DALY DF, 1971, RAD EFF, V5, P1445

[5]

GERASIMENKO NN, 1972, FIZ TEKH POLUPROV, V6, P1111

[6]

GORELKINSKII YV, 1976, SOV PHYS SEMICOND+, V10, P1339

[7]

GORELKINSKII YV, 1974, P INT C ION IMPLANTA, P132

[8]

GORELKINSKII YV, 1977, P INT C ION IMPLAT 1, P5

[9] SPIN-1 CENTERS IN NEUTRON-IRRADIATED SILICON [J].

JUNG, W ;

NEWELL, GS .

PHYSICAL REVIEW, 1963, 132 (02) :648-&

[10] EPR STUDY OF NEUTRON-IRRADIATED SILICON - POSITIVE CHARGE STATE OF (100) SPLIT DI-INTERSTITIAL [J].

LEE, YH ;

GERASIMENKO, NN ;

CORBETT, JW .

PHYSICAL REVIEW B, 1976, 14 (10) :4506-4520

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