A 5-V-ONLY 16-MB FLASH MEMORY WITH SECTOR ERASE MODE

被引：22

作者：

JINBO, T

NAKATA, H

HASHIMOTO, K

WATANABE, T

NINOMIYA, K

URAI, T

KOIKE, M

SATO, T

KODAMA, N

OYAMA, K

OKAZAWA, T

机构：

[1] NEC IC MICROCOMP SYST LTD,KAWASAKI 211,JAPAN

[2] NEC CORP LTD,ULSI DEVICE DEV LABS,SAGAMIHARA,KANAGAWA 229,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1992年 / 27卷 / 11期

关键词：

D O I：

10.1109/4.165335

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a 5-V-only 16-Mb CMOS flash memory with sector erase mode. An optimized memory cell with diffusion self-aligned (DSA) drain structure and channel erase are keys to achieving 5-V-only operation. By adopting this erase method and new row decoders to apply negative bias, 512-word sector erase can be realized. The auto chip erase time of 4 s has been achieved by adopting 64-b simultaneous operation and improved erase sequence. The cell size is 1.7 mum x 2.0 mum and the chip size is 6.3 mm x 18.5 mm using 0.6-mum double-layer metal triple-well CMOS technology.

引用

页码：1547 / 1554

页数：8