MANIFESTATION OF QUANTUM CHAOS IN ELECTRONIC BAND STRUCTURES

被引:31
作者
MUCCIOLO, ER
CAPAZ, RB
ALTSHULER, BL
JOANNOPOULOS, JD
机构
[1] Department of Physics, Massachusetts Institute of Technology, Cambridge
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 12期
关键词
D O I
10.1103/PhysRevB.50.8245
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We use semiconductors as an example to show that quantum chaos manifests itself in the energy spectrum of crystals. We analyze the ab initio band structure of silicon and the tight-binding spectrum of the alloy AlxGa1-xAs, and show that some of their statistical properties obey the universal predictions of quantum chaos derived from the theory of random matrices. Also, the Bloch momenta are interpreted as external, tunable, parameters, acting on the reduced (unit cell) Hamiltonian, in close analogy to Aharonov-Bohm fluxes threading a torus. They are used in the investigation of the parametric autocorrelator of crystal velocities. We find that our results are in good agreement with the universal curves recently proposed by Simons and co-workers.
引用
收藏
页码:8245 / 8251
页数:7
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