DEGRADATION KINETICS OF GAAS QUANTUM WELL LASERS

被引:14
作者
MADHAVAMENON, EC
PETROFF, PM
WATERS, RG
机构
[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106
[2] MCDONNELL DOUGLAS ELECTR SYST CO,ELMSFORD,NY 10523
关键词
D O I
10.1063/1.101034
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2683 / 2685
页数:3
相关论文
共 12 条
[1]   DARK DEFECTS IN INGAASP INP DOUBLE HETEROSTRUCTURE LASERS UNDER ACCELERATED AGING [J].
FUKUDA, M ;
WAKITA, K ;
IWANE, G .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1246-1250
[2]   DEFECT STRUCTURE OF DEGRADED HETEROJUNCTION GAALAS-GAAS LASERS [J].
HUTCHINSON, PW ;
DOBSON, PS ;
OHARA, S ;
NEWMAN, DH .
APPLIED PHYSICS LETTERS, 1975, 26 (05) :250-252
[3]   LUMINESCENCE OF GAAS/(AL,GA)AS SUPERLATTICES GROWN ON SI SUBSTRATES, CONTAINING A HIGH-DENSITY OF THREADING DISLOCATIONS - STRONG EFFECT SUPERLATTICE PERIOD [J].
LIU, TY ;
PETROFF, PM ;
KROEMER, H .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) :6810-6814
[4]   ORIGIN OF DISLOCATION CLIMB DURING LASER OPERATION [J].
OHARA, S ;
HUTCHINSON, PW ;
DOBSON, PS .
APPLIED PHYSICS LETTERS, 1977, 30 (08) :368-371
[5]   DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS [J].
PETROFF, P ;
HARTMAN, RL .
APPLIED PHYSICS LETTERS, 1973, 23 (08) :469-471
[6]   DISLOCATION CLIMB MODEL IN COMPOUND SEMICONDUCTORS WITH ZINC BLENDE STRUCTURE [J].
PETROFF, PM ;
KIMERLING, LC .
APPLIED PHYSICS LETTERS, 1976, 29 (08) :461-463
[7]  
PETROFF PM, 1983, SEMICOND INSUL, V5, P307
[8]   STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].
SHOCKLEY, W ;
READ, WT .
PHYSICAL REVIEW, 1952, 87 (05) :835-842
[9]  
UEDA O, 1988, J ELECTROCHEM SOC C, V11, P135
[10]  
UEDA O, 1984, J APPL PHYS, V57, P1523