DEGRADATION KINETICS OF GAAS QUANTUM WELL LASERS

被引：14

作者：

MADHAVAMENON, EC

PETROFF, PM

WATERS, RG

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

[2] MCDONNELL DOUGLAS ELECTR SYST CO,ELMSFORD,NY 10523

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 26期

关键词：

D O I：

10.1063/1.101034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2683 / 2685

页数：3

共 12 条

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FUKUDA, M ;

WAKITA, K ;

IWANE, G .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1246-1250

[2] DEFECT STRUCTURE OF DEGRADED HETEROJUNCTION GAALAS-GAAS LASERS [J].

HUTCHINSON, PW ;

DOBSON, PS ;

OHARA, S ;

NEWMAN, DH .

APPLIED PHYSICS LETTERS, 1975, 26 (05) :250-252

[3] LUMINESCENCE OF GAAS/(AL,GA)AS SUPERLATTICES GROWN ON SI SUBSTRATES, CONTAINING A HIGH-DENSITY OF THREADING DISLOCATIONS - STRONG EFFECT SUPERLATTICE PERIOD [J].

LIU, TY ;

PETROFF, PM ;

KROEMER, H .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) :6810-6814

[4] ORIGIN OF DISLOCATION CLIMB DURING LASER OPERATION [J].

OHARA, S ;

HUTCHINSON, PW ;

DOBSON, PS .

APPLIED PHYSICS LETTERS, 1977, 30 (08) :368-371

[5] DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS [J].

PETROFF, P ;

HARTMAN, RL .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :469-471

[6] DISLOCATION CLIMB MODEL IN COMPOUND SEMICONDUCTORS WITH ZINC BLENDE STRUCTURE [J].

PETROFF, PM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1976, 29 (08) :461-463

[7]

PETROFF PM, 1983, SEMICOND INSUL, V5, P307

[8] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[9]

UEDA O, 1988, J ELECTROCHEM SOC C, V11, P135

[10]

UEDA O, 1984, J APPL PHYS, V57, P1523

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