DEEP LEVEL IMPURITIES IN GERMANIUM

[1] ARMSTRONG JA, 1957, B AM PHYS SOC 2, V2, P265

[2] CARRIER CAPTURE PROBABILITIES IN NICKEL DOPED GERMANIUM [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1634 - 1637

[3] ENERGY OF THE HIGH-LYING ACCEPTOR LEVEL IN COPPER-DOPED GERMANIUM [J]. PHYSICAL REVIEW, 1954, 94 (05): : 1393 - 1393

[4] RECOMBINATION IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 990 - 1004

[5] Brooks H., 1955, ADV ELECT ELECT PHYS, V7, P85

[6] BUGAY AA, 1957, ZH TEKH FIZ MOSCOW, V27, P1671

[7] BUGAY AA, 1957, ZH TEKH FIZ MOSCOW, V27, P210

[8] BURSTEIN E, 1955, ADV ELECTRONICS ELEC, V7, P1

[9] BURTON, 1953, J PHYS CHEM-US, V57, P853

[10] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854

[1] ARMSTRONG JA, 1957, B AM PHYS SOC 2, V2, P265

[2] CARRIER CAPTURE PROBABILITIES IN NICKEL DOPED GERMANIUM [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1634 - 1637

[3] ENERGY OF THE HIGH-LYING ACCEPTOR LEVEL IN COPPER-DOPED GERMANIUM [J]. PHYSICAL REVIEW, 1954, 94 (05): : 1393 - 1393

[4] RECOMBINATION IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 990 - 1004

[5] Brooks H., 1955, ADV ELECT ELECT PHYS, V7, P85

[6] BUGAY AA, 1957, ZH TEKH FIZ MOSCOW, V27, P1671

[7] BUGAY AA, 1957, ZH TEKH FIZ MOSCOW, V27, P210

[8] BURSTEIN E, 1955, ADV ELECTRONICS ELEC, V7, P1

[9] BURTON, 1953, J PHYS CHEM-US, V57, P853

[10] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854