CAPACITANCE OF ABRUPT P-N-JUNCTION DIODES UNDER FORWARD BIAS

被引：9

作者：

GREEN, MA ^{[1
]}

GUNN, MW ^{[1
]}

机构：

[1] UNIV QUEENSLAND,DEPT ELECT ENGN,BRISBANE,AUSTRALIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 19卷 / 01期

关键词：

D O I：

10.1002/pssa.2210190163

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K93 / K96

页数：4

共 8 条

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ISKENDER.ZA ;

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AKHUNDOV, MR .

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[2]

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[3]

GREEN MA, 1971, THESIS U QUEENSLAND

[4]

MISAWA T, 1957, J PHYS SOC JPN, V12, P883

[5] AN ANALYSIS OF FREQUENCY DEPENDENCE OF CAPACITANCE OF ABRUPT P-N JUNCTION SEMICONDUCTOR DEVICES [J].

OHEARN, WF ;

CHANG, YF .

SOLID-STATE ELECTRONICS, 1970, 13 (04) :473-&

[6]

Shockley W., 1952, PHYS TODAY, V5, P18, DOI DOI 10.1063/1.3067420

[7] APPLICATION OF TRANSMISSION-LINE EQUIVALENT CIRCUIT MODEL TO ANALYSIS OF PN JUNCTION ADMITTANCE UNDER DC BIAS [J].

SMILEY, CF ;

YAU, LD ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1973, 16 (08) :895-901

[8]

SZE SM, 1969, PHYSICS SEMICONDUCTO

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