PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY ECR PLASMA CVD METHOD

被引:25
作者
KITAGAWA, M
SETSUNE, K
MANABE, Y
HIRAO, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 11期
关键词
D O I
10.1143/JJAP.27.2026
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2026 / 2031
页数:6
相关论文
共 16 条
[1]   AMORPHOUS SILICON SOLAR-CELL [J].
CARLSON, DE ;
WRONSKI, CR .
APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673
[2]   CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J].
DAVIS, EA ;
MOTT, NF .
PHILOSOPHICAL MAGAZINE, 1970, 22 (179) :903-&
[3]  
ISHIHARA S, 1897, J APPL PHYS, V62, P485
[4]   AMORPHOUS-SILICON PHOTOCONDUCTIVE SENSOR [J].
KAGAWA, T ;
MATSUMOTO, N ;
KUMABE, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :251-256
[5]   LOW-TEMPERATURE PREPARATION OF HYDROGENATED AMORPHOUS-SILICON BY MICROWAVE ELECTRON-CYCLOTRON-RESONANCE PLASMA CVD [J].
KITAGAWA, M ;
ISHIHARA, S ;
SETSUNE, K ;
MANABE, Y ;
HIRAO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (04) :L231-L233
[6]   INTERACTION OF HYDROGENATED AMORPHOUS-SILICON FILMS WITH TRANSPARENT CONDUCTIVE FILMS [J].
KITAGAWA, M ;
MORI, K ;
ISHIHARA, S ;
OHNO, M ;
HIRAO, T ;
YOSHIOKA, Y ;
KOHIKI, S .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3269-3271
[7]  
KITAGAWA M, 1987, 8TH P INT S PLASM CH, P1442
[8]   CHARACTERISTICS OF HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED BY ELECTRON-CYCLOTRON RESONANCE MICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION METHOD AND THEIR APPLICATION TO PHOTODIODES [J].
KOBAYASHI, K ;
HAYAMA, M ;
KAWAMOTO, S ;
MIKI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (02) :202-208
[9]   GLOW-DISCHARGE DEPOSITION OF A-SI-H FROM PURE SI2H6 AND PURE SIH4 [J].
MATSUDA, A ;
KAGA, T ;
TANAKA, H ;
MALHOTRA, L ;
TANAKA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02) :L115-L117
[10]   INVESTIGATION OF THE GROWTH-KINETICS OF GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON USING A RADICAL SEPARATION TECHNIQUE [J].
MATSUDA, A ;
TANAKA, K .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2351-2356