CARRIER KINETICS IN A SEMICONDUCTOR WITH LIGHT-INDUCED GAPS

被引：17

作者：

HARTMANN, M

ZIMMERMANN, R

STOLZ, H

机构：

[1] Acad der Wissenschaften der DDR, Berlin, East Ger, Acad der Wissenschaften der DDR, Berlin, East Ger

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1988年 / 146卷 / 01期

关键词：

BAND STRUCTURE - ELECTRONS - LASER BEAMS - Effects - PHONONS;

D O I：

10.1002/pssb.2221460139

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Due to the influence of a strong electromagnetic field an induced gap is expected to occur in the band structure of a semiconductor. In this paper the influence of the damping by electron-phonon collisions and by recombination on the new band structure is investigated. Taking into account damping kinetic equations for the electrons are derived and discussed with the help of calculations.

引用

页码：357 / 369

页数：13

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