TEM ANALYSIS OF NEAR-COINCIDENCE GRAIN-BOUNDARIES IN SILICON

被引：1

作者：

BARY, A ^{[1
]}

NOUET, G ^{[1
]}

DELAVIGNETTE, P ^{[1
]}

机构：

[1] UNIV LIBRE BRUXELLES,SERV PHYS SURFACES,B-1050 BRUSSELS,BELGIUM

来源：

JOURNAL OF MICROSCOPY-OXFORD | 1990年 / 158卷

关键词：

Coincidence grain boundaries; Kikuchi pattern; secondary dislocations; silicon; transmission electron microscopy;

D O I：

10.1111/j.1365-2818.1990.tb03011.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

High‐precision characterization of grain boundaries with a deviation from the ideal coincidence is presented. The analysis is based on the shift of Kikuchi lines at grain boundaries. The accuracy was controlled using Frank's relationship applied to intrinsic secondary dislocations which accommodate the orientation deviation. An application is presented to coincidences with Σ = 25 and 3 observed in polycrystalline silicon. 1990 Blackwell Science Ltd

引用

页码：403 / 414

页数：12

共 11 条

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