ON A MATHEMATICAL-MODEL FOR HOT-CARRIER INJECTION IN SEMICONDUCTORS

被引：5

作者：

BENABDALLAH, N ^{[1
]}

DEGOND, P ^{[1
]}

SCHMEISER, C ^{[1
]}

机构：

[1] VIENNA TECH UNIV, INST ANGEW & NUMER MATH, A-1040 VIENNA, AUSTRIA

来源：

MATHEMATICAL METHODS IN THE APPLIED SCIENCES | 1994年 / 17卷 / 15期

关键词：

D O I：

10.1002/mma.1670171503

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

We study a collisionless transport model for electrons in a semiconductor, and we perform an asymptotic analysis for low temperatures or large applied biases. We derive analytic relations for the built-in potential and for the current which flows through the structure.

引用

页码：1193 / 1212

页数：20

共 12 条

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[2]

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[5]

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[9]

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[10]

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