DIRECT PROOF OF 2-ELECTRON OCCUPATION OF GE-DX CENTERS IN GAAS CODOPED WITH GE AND TE

被引：35

作者：

BAJ, M ^{[1
]}

DMOWSKI, LH ^{[1
]}

SLUPINSKI, T ^{[1
]}

机构：

[1] UNIPRESS,HIGH PRESSURE RES CTR,PL-01142 WARSAW,POLAND

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.71.3529

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper we present the first direct and unambiguous evidence that the total number of electrons which can be trapped on Ge-DX centers is exactly twice as large as the number of electrons which can be bound on Ge-A1 donor states. It should bc emphasized that our reasoning does not require any technological information, about either doping or the compensation of a sample.

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页码：3529 / 3532

页数：4

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