Tunneling Spectroscopy in degenerate p-type sificon

被引:35
作者
Cullen, D. E.
Wolf, E. L.
Compton, W. Dale
机构
[1] Univ Illinois, Coordinated Sci Lab, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
来源
PHYSICAL REVIEW B-SOLID STATE | 1970年 / 2卷 / 08期
关键词
D O I
10.1103/PhysRevB.2.3157
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Tunneling in boron-doped p-type silicon metal-semiconductor (MS) and metal-insulator-semiconductor (MIS) tunnel junctions has been studied at low temperatures by measuring the derivatives dI/dV and d(2)I/dV(2) of the current-voltage characteristics as functions of applied bias voltage V. The boron impurity concentration of the silicon crystals varied from 6.5 x 10(18) to 2.3 x 10(20) cm(-3). Junctions were prepared by evaporating metal contacts onto vacuum- or air-cleaved silicon surfaces. The general features of the tunneling conductance were found to be in qualitative agreement with existing theories of tunneling in semiconductors. Structure in the derivative data resulting from the interaction of tunneling electrons with silicon zone-center optical phonons and boron local-mode phonons has been observed. The optical-phonon line shapes in the most heavily doped MIS units are shown to compare well with the theoretical line shapes in which modifications in the bulk semiconductor states arising from electron-optical-phonon interactions in the semiconductor electrode have been included. The origin of the optical-phonon and local-mode-phonon structure in samples of lower doping is not fully understood.
引用
收藏
页码:3157 / 3169
页数:13
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