TOPOLOGICAL APPROACH TO CRYSTAL VACANCY STUDIES .2. MODEL CRYSTALLITES WITH 2 AND 3 VACANCIES

被引：10

作者：

MEKENYAN, O ^{[1
]}

BONCHEV, D ^{[1
]}

FRITSCHE, H ^{[1
]}

机构：

[1] UNIV JENA,SEKT CHEM,DDR-69 JENA,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 56卷 / 02期

关键词：

D O I：

10.1002/pssa.2210560227

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The topological approach developed earlier for crystal vacancy modelling is further developed for model crystallites having two and three vacancies. The favoured vacancy positions in the lattice, as well as the trends in vacancy migrations, are found to be well reproduced. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：607 / 614

页数：8

共 7 条

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FRITSCHE, HG .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (01) :181-187

[3]

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[4]

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[5]

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