CHARGE CONDUCTION IN POLYBITHIOPHENE - AN INSITU FOURIER-TRANSFORM INFRARED STUDY

被引：54

作者：

CHRISTENSEN, PA

HAMNETT, A

HILLMAN, AR

SWANN, MJ

HIGGINS, SJ

机构：

[1] UNIV BRISTOL,SCH CHEM,BRISTOL BS8 1TS,AVON,ENGLAND

[2] UNIV LIVERPOOL,DEPT CHEM,DONNAN ROBERT ROBINSON LABS,LIVERPOOL L69 3BX,ENGLAND

来源：

JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS | 1992年 / 88卷 / 04期

关键词：

D O I：

10.1039/ft9928800595

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper reports results on the oxidation of polybithiophene in acetonitrile, obtained using in situ FTIR. At doping levels less-than-or-equal-to 11%, the data can be interpreted in terms of a polaron-hopping model, the polaron being ca. five to six monomer units in length. At higher doping levels, the results are consistent with the polymer behaving as a narrow bandgap semiconductor. Ellipsometric measurements are also reported.

引用

页码：595 / 604

页数：10

共 33 条

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