ZENER TUNNELING IN SEMICONDUCTORS

被引:788
作者
KANE, EO
机构
关键词
D O I
10.1016/0022-3697(60)90035-4
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:181 / 188
页数:8
相关论文
共 15 条
[1]   DEFINITION OF ENERGY BANDS IN THE PRESENCE OF AN EXTERNAL FORCE FIELD [J].
ADAMS, EN .
PHYSICAL REVIEW, 1957, 107 (03) :698-701
[2]   THE CRYSTAL MOMENTUM AS A QUANTUM MECHANICAL OPERATOR [J].
ADAMS, EN .
JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) :2013-2017
[3]   INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1957, 106 (03) :418-426
[4]   NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J].
ESAKI, L .
PHYSICAL REVIEW, 1958, 109 (02) :603-604
[5]  
FRANZ W, 1956, INT C SEMICONDUCTORS, P317
[6]   Acceleration of electrons in a crystal lattice [J].
Houston, WV .
PHYSICAL REVIEW, 1940, 57 (03) :184-186
[7]   BAND STRUCTURE OF INDIUM ANTIMONIDE [J].
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261
[8]  
KELDYSH LV, 1958, SOV PHYS JETP-USSR, V6, P763
[9]   OBSERVATIONS OF ZENER CURRENT IN GERMANIUM P-N JUNCTIONS [J].
MCAFEE, KB ;
RYDER, EJ ;
SHOCKLEY, W ;
SPARKS, M .
PHYSICAL REVIEW, 1951, 83 (03) :650-651
[10]  
MORSE PM, 1953, METHODS THEORETICLA, P440