SOLID-STATE CHARACTERISTICS OF INDIUM-INCORPORATED TIO2 THIN-FILMS

被引：25

作者：

BADAWY, WA ^{[1
]}

MOMTAZ, RS ^{[1
]}

ELGIAR, EM ^{[1
]}

机构：

[1] SUEZ CANAL UNIV,FAC ENGN,DEPT PHYS & MATH,SUEZ,EGYPT

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 118卷 / 01期

关键词：

D O I：

10.1002/pssa.2211180123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pure and indium‐incorporated TiO2 thin films are prepared on glass and fused silica substrates using the spray‐pyrolysis technique. The effect of concentration of indium and the thickness of the prepared films on the solid state characteristics of the film is studied. The study includes spectroscopic investigations, impedance measurements, and energy‐gap calculations. The results reveal that the incorporation of indium in the TiO2 matrix up to a thickness of ≈80 nm has no effect on the transmittance of the oxide film in the visible region. The conductivity and band‐gap energy are found to increase in presence of In incorporation. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：197 / 202

页数：6

共 24 条

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Abbas A. K., 1986, J APPL PHYS, V59, P1641

[2] ELECTRICAL AND OPTICAL-PROPERTIES OF CHEMICALLY DEPOSITED CONDUCTING GLASS FOR SIS SOLAR-CELLS [J].