GAP-STATE IN YBB12 AND SMB6 - REAL KONDO INSULATORS

被引：74

作者：

KASUYA, T ^{[1
]}

机构：

[1] CENS,CEA,CNRS,LAB LEON BRILLOUIN,F-91191 GIF SUR YVETTE,FRANCE

来源：

EUROPHYSICS LETTERS | 1994年 / 26卷 / 04期

关键词：

D O I：

10.1209/0295-5075/26/4/007

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The origin of the gap state in YbB12 and SmB6 has been studied in detail, in particular for YbB12. It is shown that, due to the Coulomb interaction, an electron created by the mixing with the 4f state, and the hole created in the conduction band to screen the 4f hole, form a bound state in low-carrier-density systems. Various mysterious properties are explained very well by this model.

引用

页码：277 / 281

页数：5

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