HIGH-SENSITIVITY AND SELECTIVITY METHANE GAS SENSORS DOPED WITH RH AS A CATALYST

被引：40

作者：

LEE, DD

CHUNG, WY

SOHN, BK

机构：

[1] Department of Electronics, Kyungpook National University, Taegu

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1993年 / 13卷 / 1-3期

关键词：

D O I：

10.1016/0925-4005(93)85374-J

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

SnO2(Rh) thick-film devices for detecting methane ps selectively have been prepared by the screen-printing technique, and their characteristics have been investigated. The sensitivity of an SnO2 thick film with added Rh to CH4 (1000 ppm) is about 90% at an operating temperature of 400-degrees-C, which is higher than those of SnO2 thick-film devices with added Pt or Pd.

引用

页码：252 / 255

页数：4

共 5 条

[1] CHARACTERISTICS OF ALPHA-FE2O3 THICK-FILM GAS SENSORS [J].

CHUNG, WY ;

LEE, DD .

THIN SOLID FILMS, 1991, 200 (02) :329-339

[2] GAS-SENSING CHARACTERISTICS OF SNO2-X THIN-FILM WITH ADDED PT FABRICATED BY THE DIPPING METHOD [J].

LEE, DD ;

CHUNG, WY .

SENSORS AND ACTUATORS, 1989, 20 (03) :301-305

[3] SEMICONDUCTOR GAS SENSORS [J].

MORRISON, SR .

SENSORS AND ACTUATORS, 1982, 2 (04) :329-341

[4] MECHANISM OF HYDROGEN GAS-SENSING AT LOW-TEMPERATURES USING RH/TIO2 SYSTEMS [J].

MUNUERA, G ;

GONZALEZELIPE, AR ;

MUNOZ, A ;

FERNANDEZ, A ;

SORIA, J ;

CONESA, J ;

SANZ, J .

SENSORS AND ACTUATORS, 1989, 18 (3-4) :337-348

[5]

1985, Patent No. 4535315

← 1 →