ELECTRON-HOLE LIQUID IN GAP-N

被引：17

作者：

KARDONTCHIK, JE ^{[1
]}

COHEN, E ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,HAIFA,ISRAEL

来源：

PHYSICAL REVIEW B | 1979年 / 19卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.19.3181

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The radiative recombination of the nitrogen-induced electron-hole liquid in GaP: N is observed. The liquid is formed by delocalization of excitons bound to nitrogen in crystals in which the nitrogen concentration exceeds 1017 cm-3, and under intense band-gap or selective excitation into the lowest J=1 state of the bound exciton (A line). The observed binding energy is 17 meV relative to the free-exciton level. The liquid density is in the range of (1-4) × 1018 cm-3 for excitation intensity varying in the range of 1014-1018 photons/cm2/pulse. © 1979 The American Physical Society.

引用

页码：3181 / 3186

页数：6

共 14 条

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