SPIN-LATTICE RELAXATION OF SHALLOW DONOR STATES IN GE AND SI THROUGH A DIRECT PHONON PROCESS

被引：142

作者：

HASEGAWA, H

机构：

来源：

PHYSICAL REVIEW | 1960年 / 118卷 / 06期

关键词：

D O I：

10.1103/PhysRev.118.1523

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1523 / 1534

页数：12

共 31 条

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