Optical and electronic properties of SiGeC alloys grown on Si substrate

被引:40
作者
Kolodzey, J
Berger, PR
Orner, BA
Hits, D
Chen, F
Khan, A
Shao, X
Waite, MM
Shah, SI
Swann, CP
Unruh, KM
机构
[1] DUPONT CO INC,EXPTL STN,WILMINGTON,DE 19898
[2] UNIV DELAWARE,DEPT PHYS & ASTRON,NEWARK,DE 19716
关键词
D O I
10.1016/0022-0248(95)00329-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Metastable Si1-x-yGexCy alloys were grown by molecular beam epitaxy on (100) Si substrates. Solid elemental sources were used for the Si and Ge beams, and a resistively heated graphite filament was used for the C beam. Up to 3 at % of C was incorporated in the alloy layers. Optical transmission measurements showed that the absorption edge of thick layers increased to higher energies with increasing C fraction, and revealed the presence of Si-C and Ge-C vibrational modes in the infrared. Al low temperatures, the alloys showed significant photoluminescence. The bandgap energies of thick layers increased linearly with the C fraction and followed a linear dependence of the bandgap on composition. Measurements of the valence band density of states using X-ray photoelectron spectroscopy indicated that the valence band energy maximum increased with the C fraction relative to that of SiGe alloys of similar composition. Our results indicated that SiGeC alloys are promising materials for Si-based heterostructure devices.
引用
收藏
页码:386 / 391
页数:6
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