PRESSURE DEPENDENCE OF THE CURRENT-VOLTAGE CHARACTERISTICS OF ESAKI DIODES

被引:33
作者
MILLER, SL
NATHAN, MI
SMITH, AC
机构
关键词
D O I
10.1103/PhysRevLett.4.60
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:60 / 62
页数:3
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共 12 条
[1]   The resistance of nineteen metals to 30,000 kg/Cm2 [J].
Bridgman, PW .
PROCEEDINGS OF THE AMERICAN ACADEMY OF ARTS AND SCIENCES, 1938, 72 (3/10) :157-205
[2]  
BRIDGMAN PW, 1953, P AM ACAD ARTS SCI, V82, P71
[3]   NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J].
ESAKI, L .
PHYSICAL REVIEW, 1958, 109 (02) :603-604
[4]  
ESAKI L, UNPUBLISHED
[5]   DIRECT OBSERVATION OF PHONONS DURING TUNNELING IN NARROW JUNCTION DIODES [J].
HOLONYAK, N ;
LESK, IA ;
HALL, RN ;
TIEMANN, JJ ;
EHRENREICH, H .
PHYSICAL REVIEW LETTERS, 1959, 3 (04) :167-168
[6]  
KELDYSH LV, 1958, SOV PHYS JETP, V34, P665
[7]   PRESSURE DEPENDENCE OF THE RESISTIVITY OF GERMANIUM [J].
PAUL, W ;
BROOKS, H .
PHYSICAL REVIEW, 1954, 94 (05) :1128-1133
[9]  
PRICE PB, COMMUNICATION
[10]   ESAKI TUNNELING [J].
PRICE, PJ ;
RADCLIFFE, JM .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1959, 3 (04) :364-371