ELECTRICAL AND RECOMBINATION CHARACTERISTICS OF GE-GAAS AND SIXGE1-X-GAAS HETEROJUNCTIONS

被引:4
作者
BORKOVSKAYA, OY
DMITRUK, NL
KONAKOVA, RV
SOLDATENKO, NN
TKHORIK, YA
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 59卷 / 01期
关键词
D O I
10.1002/pssa.2210590152
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:395 / 400
页数:6
相关论文
共 11 条
[1]  
DATIEV KM, 1970, ELEKTRON TEKH 2, P35
[2]  
DAVYDOVA NS, 1972, RADIOTEKH, V27, P50
[3]  
DZHYAFAROV TD, 1978, DEFECTS DIFFUSION EP
[4]   DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].
GARTNER, WW .
PHYSICAL REVIEW, 1959, 116 (01) :84-87
[5]   GAAS SCHOTTKY-BARRIER AVALANCHE DIODES [J].
KIM, CK ;
ARMSTRON.LD .
SOLID-STATE ELECTRONICS, 1970, 13 (01) :53-&
[6]  
MATARE G, 1974, ELECTRONICS DEFECTS
[7]  
MILVIDSKY MG, 1977, KRISTALLOGRAFIYA+, V22, P431
[8]  
SEIDEL T, 1969, Patent No. 3466512
[9]  
SHISHIYANU FS, 1978, DIFFUSION DEGRADATIO
[10]  
VALDPERLOV VM, Patent No. 245922