NORMAL INCIDENCE SECOND-HARMONIC GENERATION IN L-VALLEY ALSB/GASB/GA1-XALXSB/ALSB STEPPED QUANTUM-WELLS

被引：24

作者：

XIE, H

WANG, WI

MEYER, JR

RAMMOHAN, LR

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] WORCESTER POLYTECH INST,DEPT PHYS ELECT & COMP ENGN,WORCESTER,MA 01609

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 16期

关键词：

D O I：

10.1063/1.112789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel mechanism is proposed for surface-emitting second-harmonic generation at normal incidence using L-valley intersubband transitions in AlSb/GaSb/Ga1-xAlxSb/AlSb stepped quantum wells. The calculations indicate that second-harmonic susceptibilities of at least 9 x 10(-8) m/V should be achievable under double resonance conditions, which is comparable to the best obtainable in GaAs/Ga1-xAlxAs systems for realistic propagation angles (e.g., 45-degrees). Besides the advantage of normal-incidence geometry, the large L-valley conduction band offset between GaSb and AlSb enables doubling to frequencies spanning the entire midwave infrared spectral region. (C) 1994 American Institute of Physics.

引用

页码：2048 / 2050

页数：3

共 30 条

[1]

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