AVALANCHE FORMATION AND HIGH-INTENSITY INFRARED TRANSMISSION LIMIT IN INAS, INSB, AND HG1-XCDXTE

被引：22

作者：

JAMISON, SA ^{[1
]}

NURMIKKO, AV ^{[1
]}

机构：

[1] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912

来源：

PHYSICAL REVIEW B | 1979年 / 19卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.19.5185

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-intensity infrared transmission in n-InAs, InSb, and Hg1-xCdxTe (x=0.23) has been examined by subjecting samples of these narrow-gap semiconductors to laser radiation of nanosecond duration at 10.6 m. In each case a distinct high-intensity transmission limit was observed, beyond which further increases in incident intensity caused a rapid and large decrease in the transmission coefficient. Such self-enhanced opacity" has been observed to occur on subnanosecond time scale. We have suggested an explanation by considering a model in which hot-electron generation by intraband absorption leads to an avalanche of excess carriers with a large cross section for intervalence band absorption for holes at 10.6 m. Our results are of relevance to current work on laser-excited plasmas and their device applications in narrow-gap semiconductors. © 1979 The American Physical Society."

引用

页码：5185 / 5193

页数：9

共 19 条

[1] AUGER-LIMITED CARRIER LIFETIMES IN HGCDTE AT HIGH EXCESS CARRIER CONCENTRATIONS [J].