A CHEMICAL METHOD FOR TIN DISULFIDE THIN-FILM DEPOSITION

被引：92

作者：

LOKHANDE, CD

机构：

[1] Department of Physics, Shivaji University, Kolhapur

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1990年 / 23卷 / 12期

关键词：

D O I：

10.1088/0022-3727/23/12/032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of tin disulphide (SnS2) have been chemically deposited for the first time from an acidic bath, using sodium thiosulphate (Na2S2O3) as a sulphur source, onto glass, tin oxide-coated glass and titanium substrates. Their electrical, optical and photoelectrochemical properties have been studied. The chemically deposited SnS2films are n-type semiconductors and the optical band gap is 2.35 eV. The room temperature resistivity is of the order of 103-104Omega cm. As-deposited SnS2films showed photovoltaic activity. © 1990 IOP Publishing Ltd.

引用

页码：1703 / 1705

页数：3

共 9 条

[1] ELECTRONIC BANDGAP MEASUREMENTS OF SNS2 POLYTYPES
ACHARYA, S
SRIVASTAVA, ON
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (01): : K1 - &
[2] ASSOCIATION OF IRON MICRO-TRACES WITH OXYGEN IN TIN CHALCOGENIDES
FANO, V
ORTALLI, I
[J]. JOURNAL OF MATERIALS SCIENCE, 1977, 12 (01) : 210 - 212
[3] CHARACTERIZATION OF SNS2 FILMS FORMED FROM THE VAPOR-PHASE IN A CLOSED TUBE
MATSUMOTO, K
KANEKO, S
[J]. THIN SOLID FILMS, 1984, 121 (03) : 227 - 232
[4] ELECTRICAL AND PHOTOCONDUCTIVE PROPERTIES OF SNS2 CRYSTALS
PATIL, SG
TREDGOLD, RH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (05) : 718 - &
[5] ELECTRICAL-CONDUCTION MECHANISMS IN TIN DISULFIDE
SAID, G
LEE, PA
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (01): : 99 - 103
[6] PHOTOEMISSION STUDIES OF BAND STRUCTURES OF TRANSITION-METAL DICHALCOGENIDES .1. GROUP-IVA AND GROUP-IVB
SHEPHERD, FR
WILLIAMS, PM
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (23): : 4416 - 4426
[7] Vogel A.I., 1968, QUANTITATIVE INORGAN
[8] WHITEHOUSE CR, 1979, J MATER SCI, V144, P2516
[9] BAND-STRUCTURE AND PHOTOEMISSION STUDIES OF SNS2 AND SNSE2 .1. EXPERIMENTAL
WILLIAMS, RH
MURRAY, RB
GOVAN, DW
THOMAS, JM
EVANS, EL
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (24): : 3631 - 3642

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