ASSESSMENT OF THE BORON IMPURITY IN SEMIINSULATING GALLIUM-ARSENIDE BY LOCALIZED VIBRATIONAL-MODE SPECTROSCOPY

被引：8

作者：

ALT, HC

MAIER, M

机构：

[1] Siemens Res. Lab. for Mater. Sci. and Electron., Munchen

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 05期

关键词：

D O I：

10.1088/0268-1242/6/5/005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The determination of the boron background contamination in semi-insulating GaAs by localized vibrational mode spectroscopy has been studied. Comparison with secondary ion mass spectrometry shows that there is a strictly linear correlation between the total boron concentration and the strength of the infrared absorption line at 517 cm-1 (B-11Ga). A new calibration factor is given: f = 11.5 x 10(16) cm-1. The detection limit for the infrared method is at least 1 x 10(16) cm-3. Experimental procedures and the influence of temperature and spectral resolution are discussed in detail.

引用

页码：343 / 347

页数：5

共 20 条

[1]

Martin GM, Farges JP, Jacob G, Hallais JP, Poiblaud G, J. Appl. Phys., 51, 5, pp. 2840-2852, (1980)

[2]

Clegg JB, pp. 80-91, (1982)

[3]

H Ch, (1990)

[4]

Orito F, Kawabata S, Yamada Y, Okada Y, J. Appl. Phys., 63, 8, pp. 2691-2693, (1988)

[5]

Baumgartner M, (1990)

[6]

Newman RC, Thompsom F, Hyliands M, Peart RF, Solid State Commun., 10, 6, pp. 505-507, (1972)

[7]

Newman RC, pp. 87-100, (1985)

[8]

Moore WJ, Hawkins RL, Shanabrook BV, Physica, 146, pp. 65-74, (1987)

[9]

Osaka J, Hyuga F, Kobayashi T, Yamada Y, Orito F, Appl. Phys. Lett., 50, 4, pp. 191-193, (1987)

[10]

Morrow RA, J. Appl. Phys., 62, 9, pp. 3671-3676, (1987)

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