DESIGN TRADEOFFS FOR NEUTRON RADIATION-TOLERANT SILICON TRANSISTOR

被引：6

作者：

LAURTIZEN, PO

FITZGERALD, DJ

机构：

来源：

关键词：

D O I：

10.1109/TNS2.1964.4315473

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：39 / &

共 9 条

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[2]

EMIS R, 1958, P IRE, V46, P1220

[3]

FITZGERALD DJ, TO BE PUBLISHED

[4]

HAUSER JR, 1964, IEEE T ELEC DEV, VEDI1, P237

[5]

KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164

[6] BETA CUTOFF FREQUENCIES OF JUNCTION TRANSISTORS [J].

LINDMAYER, J ;

WRIGLEY, CY .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02) :194-&

[7] ANALYSIS OF THE EFFECT OF NUCLEAR RADIATION ON TRANSISTORS [J].

LOFERSKI, JJ .

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[9]

SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895