CAVITY ENHANCEMENT OF RESONANT FREQUENCIES IN SEMICONDUCTOR-LASERS SUBJECT TO OPTICAL-INJECTION

被引：15

作者：

SIMPSON, TB

LIU, JM

HUANG, KF

TAI, K

CLAYTON, CM

GAVRIELIDES, A

KOVANIS, V

机构：

[1] UNIV CALIF LOS ANGELES, DEPT ELECT ENGN, LOS ANGELES, CA 90095 USA

[2] NATL CHIAO TUNG UNIV, DEPT ELECTROPHYS, HSINCHU 30050, TAIWAN

[3] USAF, PHILLIPS LAB, CTR NONLINEAR OPT, KIRTLAND AFB, NM 87117 USA

来源：

PHYSICAL REVIEW A | 1995年 / 52卷 / 06期

关键词：

D O I：

10.1103/PhysRevA.52.R4348

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The injection of an optical signal into a semiconductor laser biased near or above the lasing threshold modifies the coupling between the free carriers and the intracavity field. The detuning between the frequency of the injected signal and the free-running oscillation frequency and the ratio of the photon lifetime to the carrier lifetime are key parameters in determining the enhancement of the carrier-field resonant coupling frequency and the stability of the output field. Experimental results using a vertical cavity surface emitting laser biased near threshold are in agreement with calculations using a lumped-element oscillator model.

引用

页码：R4348 / R4351

页数：4

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