HALL-EFFECT IN CLO4- DOPED POLYTHIOPHENE AND POLY(3-METHYLTHIOPHENE)

被引：4

作者：

FUKUHARA, T ^{[1
]}

MASUBUCHI, S ^{[1
]}

KAZAMA, S ^{[1
]}

机构：

[1] CHUO UNIV, DEPT PHYS, BUNKYO KU, TOKYO 112, JAPAN

来源：

SYNTHETIC METALS | 1995年 / 69卷 / 1-3期

关键词：

D O I：

10.1016/0379-6779(94)02485-H

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the temperature dependence of the Hall effect and the resistivity for ClO4- (as-grown) doped poly thiophene and poly(3-methylthiophene) films. For both samples, the sign of Hall coefficient is positive between 4.2K and 300K, consistent with the acceptor doping.

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页码：359 / 360

页数：2

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