ASYMMETRIC IMPLANTATION SELF-ALIGNMENT TECHNIQUE FOR GAAS-MESFETS

被引:3
作者
KIMURA, T [1 ]
INOKUCHI, K [1 ]
AKIYAMA, M [1 ]
SAKUTA, M [1 ]
机构
[1] OKI ELECT IND CO LTD, RES & DEV GRP, HACHIOJI, TOKYO 193, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 07期
关键词
D O I
10.1143/JJAP.27.L1340
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L1340 / L1343
页数:4
相关论文
共 3 条
[1]  
HIGASHISAKA A, 1983, 15TH C SOL STAT DEV, P69
[2]  
Nakamura H., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P134
[3]   BELOW 10 PS/GATE OPERATION WITH BURIED P-LAYER SAINT FETS [J].
YAMASAKI, K ;
KATO, N ;
HIRAYAMA, M .
ELECTRONICS LETTERS, 1984, 20 (25-2) :1029-1031