NBN/MGO/NBN JOSEPHSON-JUNCTIONS FOR INTEGRATED-CIRCUITS

被引：11

作者：

AOYAGI, M

NAKAGAWA, H

KUROSAWA, I

TAKADA, S

机构：

[1] Electrotechnical Laboratory, Ibaraki, 305, 1-1-4 Umezono, Tsukuba

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 6A期

关键词：

JOSEPHSON JUNCTION; CRITICAL CURRENT; NIOBIUM NITRIDE; MAGNESIUM OXIDE; IC; SPUTTERING; LOGIC CIRCUIT;

D O I：

10.1143/JJAP.31.1778

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Characteristics of the NbN/MgO/NbN Josephson junction for integrated circuits have been investigated. The deposition process of the MgO film for the tunnel barrier was systematically investigated to obtain the controllability of the Josephson critical current density. The reproducibility of the Josephson critical current density was improved to +/-28% with the critical current density of 610 A/cm2 and +/-20% with the critical current density of 16 kA/cm2. The uniformity of the Josephson critical current density across a 3 cm-square area on the substrate was improved to +/-12% with the critical current density of 650 A/cm2.

引用

页码：1778 / 1783

页数：6

共 12 条

[1] TUNNELING BETWEEN SUPERCONDUCTORS [J].