Electrical resistivity of single crystalline UGe2 at high pressure and high magnetic field

被引：37

作者：

Oomi, Gendo ^{[1
]}

Kagayama, Tomoko ^{[1
]}

Nishimura, Kazutaka ^{[1
]}

Yun, S. W. ^{[2
]}

Onuki, Yoshichika ^{[3
]}

机构：

[1] Kumamoto Univ, Fac Gen Educ, Dept Phys, Kumamoto 860, Japan

[2] Univ Tsukuba, Inst Mat Sci, Ibaraki 305, Japan

[3] Osaka Univ, Dept Phys, Toyonaka, Osaka 560, Japan

来源：

PHYSICA B-CONDENSED MATTER | 1995年 / 206卷

关键词：

D O I：

10.1016/0921-4526(94)00507-R

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electrical resistivity rho(T) of single crystalline UGe2 has been measured at high pressure up to 20 kbar and high magnetic field to 5 T. It was found that the Curie temperature T-c(K) decreases with increasing pressure and tends to disappear around 18 kbar. The magnitude of magnetoresistance Delta rho/rho decreases with pressure. The result is discussed briefly on the basis of the theory of weak itinerant ferromagnetism.

引用

页码：515 / 518

页数：4

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