ELECTRO-LUMINESCENCE BY IMPACT EXCITATION IN ZNS-MN AND ZNSE-MN SCHOTTKY DIODES

被引:11
作者
GORDON, NT
机构
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D O I
10.1109/T-ED.1981.20361
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:434 / 436
页数:3
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[1]  
ALLEN JW, 1973, J LUM, V7, P222
[2]   DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].
BARAFF, GA .
PHYSICAL REVIEW, 1962, 128 (06) :2507-&
[3]   ENERGY BAND STRUCTURES OF CUBIC ZNS ZNSE ZNTE AND CDTE (KORRINGA-KOHN-ROSTOKER METHOD) [J].
ECKELT, P .
PHYSICA STATUS SOLIDI, 1967, 23 (01) :307-&
[4]  
LIVINGSTONE AW, J PHYS C, V6, P3491
[5]   GUNN EFFECT IN ZNSE [J].
LUDWIG, GW ;
AVEN, M .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) :5326-+
[7]   ELECTROLUMINESCENT THIN FILMS [J].
THORNTON, WA .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (01) :123-124
[8]   HIGH-EFFICIENCY DC ELECTROLUMINESCENCE IN ZNS ,MN CU) [J].
VECHT, A ;
WERRING, NJ ;
SMITH, PJF .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (01) :134-&
[9]   CALCULATION OF REFLECTIVITY, MODULATED REFLECTIVITY, AND BAND STRUCTURE OF GAAS, GAP, ZNSE, AND ZNS [J].
WALTER, JP ;
COHEN, ML .
PHYSICAL REVIEW, 1969, 183 (03) :763-&