DIELECTRIC FUNCTION IN HGTE BETWEEN 8 AND 300 DEGREES K

[1] SINGLE PHONON ABSORPTION BANDS IN FAST NEUTRON IRRADIATED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUN) : 573 - &

[2] IONIZED-IMPURITY-LIMITED MOBILITY AND BAND STRUCTURE OF MERCURIC SELENIDE [J]. PHYSICAL REVIEW, 1969, 183 (03): : 754 - &

[3] IONIZED-IMPURITY-LIMITED MOBILITY OF ALPHA-SN IN RANDOM-PHASE APPROXIMATION [J]. PHYSICAL REVIEW B, 1970, 1 (12): : 4568 - &

[4] EVIDENCE FOR A DIELECTRIC SINGULARITY IN HGSE AND HGTE [J]. PHYSICAL REVIEW B, 1970, 2 (06): : 1818 - &

[5] BURSTEIN E, 1969, ELEMENTARY EXCITATIO

[6] CARTER DL, 1970, 1970 P C PHYS SEM NA, P273

[7] RESTRAHLEN REFLECTION IN HGTE [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (08) : 213 - 215

[8] GAUR SP, TO BE PUBLISHED

[9] Ivanov-Omskii V. I., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P417

[10] Ivanov-Omskii V. I., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P1669

[1] SINGLE PHONON ABSORPTION BANDS IN FAST NEUTRON IRRADIATED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUN) : 573 - &

[2] IONIZED-IMPURITY-LIMITED MOBILITY AND BAND STRUCTURE OF MERCURIC SELENIDE [J]. PHYSICAL REVIEW, 1969, 183 (03): : 754 - &

[3] IONIZED-IMPURITY-LIMITED MOBILITY OF ALPHA-SN IN RANDOM-PHASE APPROXIMATION [J]. PHYSICAL REVIEW B, 1970, 1 (12): : 4568 - &

[4] EVIDENCE FOR A DIELECTRIC SINGULARITY IN HGSE AND HGTE [J]. PHYSICAL REVIEW B, 1970, 2 (06): : 1818 - &

[5] BURSTEIN E, 1969, ELEMENTARY EXCITATIO

[6] CARTER DL, 1970, 1970 P C PHYS SEM NA, P273

[7] RESTRAHLEN REFLECTION IN HGTE [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (08) : 213 - 215

[8] GAUR SP, TO BE PUBLISHED

[9] Ivanov-Omskii V. I., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P417

[10] Ivanov-Omskii V. I., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P1669