ANALYSIS OF THE INPLANE BANDGAP DISTRIBUTION IN SELECTIVELY GROWN INGAAS/INGAASP MULTIPLE-QUANTUM-WELL BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

The in-plane distribution of growth rate enhancement and bandgap (E(g)) of the selectively grown InGaAs/In GaAsP multiple quantum well (MQW) structure using a twin stripe mask is investigated. The dependence of the growth rate enhancement and E(g) transition profile on the mask width and mask opening width is investigated experimentally, and discussed by the simulation based on the vapor phase diffusion model of the re-evaporated reactant from the mask to the open area. Growth profile in the direction perpendicular to the stripe is explained by one-dimensional vapor phase diffusion. Bandgap transition length along the mask opening stripe decreases with decreasing the mask width and the mask opening width. In-plane bandgap distribution is calculated by simple two-dimensional diffusion model, and the results are consistent with the experimental data.