ELECTROSTATIC DISCHARGE DAMAGE OF MR HEADS

被引:48
作者
TIAN, H
LEE, JJK
机构
[1] Conner Peripherals, San Jose
关键词
D O I
10.1109/20.490073
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Two mechanisms of ESD damage of MR heads, electrothermal damage of NIR sensors and dielectric breakdown of MR shields, were investigated, Experimental results of temperature rise within the MR sensors agree well with theoretical predictions.
引用
收藏
页码:2624 / 2626
页数:3
相关论文
共 5 条
[1]  
MCATEER J, 1990, ELECTROSTATIC DISCHA
[2]  
WALLASH AJ, 1994, ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS, 1994, P273
[3]   DETERMINATION OF THRESHOLD FAILURE LEVELS OF SEMICONDUCTOR DIODES AND TRANSISTORS DUE TO PULSE VOLTAGES [J].
WUNSCH, DC ;
BELL, RR .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (06) :244-+
[4]  
1979, EOS ESD S P
[5]  
1991, S51 EOS ESD ASS