AN EFFICIENT MULTIRESONANT AVALANCHE DIODE OSCILLATOR IN 1.5 TO 11 GHZ RANGE

被引：15

作者：

SNAPP, CP

HOEFFLINGER, B

机构：

[1] Dept. of Elec. Engrg., Cornell University, Ithaca

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 11期

关键词：

D O I：

10.1109/PROC.1968.6786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The extremely broad-band negative resistance properties of a punch-through silicon avalanche diode enables efficient operation to be extended to small transit angles. Operation over approximately three octaves is effected by the transit-time mode and a low-frequency mode characterized by the presence of higher frequency idler components. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：2054 / +

页数：1