NANOFABRICATION

被引：52

作者：

SMITH, HI ^{[1
]}

CRAIGHEAD, HG ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

PHYSICS TODAY | 1990年 / 43卷 / 02期

关键词：

D O I：

10.1063/1.881222

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

[No abstract available]

引用

页码：24 / 30

页数：7

共 27 条

[1] RESOLUTION LIMITS FOR ELECTRON-BEAM LITHOGRAPHY [J].

BROERS, AN .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1988, 32 (04) :502-513

[2] ELECTRON-OPTICAL PERFORMANCE OF A SCANNING TUNNELING MICROSCOPE CONTROLLED FIELD-EMISSION MICROLENS SYSTEM [J].

CHANG, THP ;

KERN, DP ;

MCCORD, MA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1855-1861

[3] SUB-100-NM X-RAY MASK TECHNOLOGY USING FOCUSED-ION-BEAM LITHOGRAPHY [J].

CHU, W ;

YEN, A ;

ISMAIL, K ;

SHEPARD, MI ;

LEZEC, HJ ;

MUSIL, CR ;

MELNGAILIS, J ;

KU, YC ;

CARTER, JM ;

SMITH, HI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1583-1585

[4] OBSERVATION OF SINGLE-ELECTRON CHARGING EFFECTS IN SMALL TUNNEL-JUNCTIONS [J].

FULTON, TA ;

DOLAN, GJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (01) :109-112

[5] A VECTOR-SCAN THERMAL-FIELD EMISSION NANOLITHOGRAPHY SYSTEM [J].

GESLEY, MA ;

HOHN, FJ ;

VISWANATHAN, RG ;

WILSON, AD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :2014-2018

[6] INSITU VAPORIZATION OF VERY LOW-MOLECULAR WEIGHT RESISTS USING 1-2 NM DIAMETER ELECTRON-BEAMS [J].

ISAACSON, M ;

MURRAY, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1117-1120

[7] LATERAL RESONANT TUNNELING IN A DOUBLE-BARRIER FIELD-EFFECT TRANSISTOR [J].

ISMAIL, K ;

ANTONIADIS, DA ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1989, 55 (06) :589-591

[8] MAGNETIC-FLUX COMMENSURABILITY IN COUPLED QUANTUM DOTS [J].

ISMAIL, K ;

SMITH, TP ;

MASSELINK, WT ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1989, 55 (26) :2766-2768

[9] ONE-DIMENSIONAL SUBBANDS AND MOBILITY MODULATION IN GAAS ALGAAS QUANTUM WIRES [J].

ISMAIL, K ;

ANTONIADIS, DA ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1989, 54 (12) :1130-1132

[10] NEGATIVE TRANSCONDUCTANCE AND NEGATIVE DIFFERENTIAL RESISTANCE IN A GRID-GATE MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

ISMAIL, K ;

CHU, W ;

YEN, A ;

ANTONIADIS, DA ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1989, 54 (05) :460-462

← 1 2 3 →