EXTREMELY LOW-LOSS 4 X 4 GAAS/ALGAAS OPTICAL MATRIX SWITCH

被引：10

作者：

HAMAMOTO, K

SUGOU, S

KOMATSU, K

KITAMURA, M

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation, Tsukuba City, Ibaraki 305

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 17期

关键词：

OPTICAL SWITCHES; INTEGRATED OPTICS;

D O I：

10.1049/el:19931053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 4 x 4 GaAs/AlGaAs optical matrix switch with an extremely low loss of 1.6 dB has been developed. This low loss switch was achieved by layer structure modification, to reduce free-carrier absorption, reduction of plasma damage while dry etching, and an improvement in the crystal quality.

引用

收藏

页码：1580 / 1582

页数：3

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