SURFACE PHOTOVOLTAGE SPECTROSCOPY - NEW APPROACH TO STUDY OF HIGH-GAP SEMICONDUCTOR SURFACES

被引：233

作者：

GATOS, HC

LAGOWSKI, J

机构：

[1] MIT,DEPT MET & MAT SCI,CAMBRIDGE,MA 02139

[2] MIT,DEPT ELECT ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1973年 / 10卷 / 01期

关键词：

D O I：

10.1116/1.1317922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：130 / 135

页数：6

共 16 条

[1]

[Anonymous], 1877, P R SOC LONDON, DOI DOI 10.1098/RSPL.1876.0024

[2] DETERMINATION OF SURFACE STATE ENERGY POSITIONS BY SURFACE PHOTOVOLTAGE SPECTROMETRY - CDS [J].

BALESTRA, C ;

LAGOWSKI, J ;

GATOS, HC .

SURFACE SCIENCE, 1971, 26 (01) :317-&

[3] APPLICATION OF QUANTUM-DEFECT METHOD TO OPTICAL TRANSITIONS INVOLVING DEEP EFFECTIVE-MASS-LIKE IMPURITIES IN SEMICONDUCTORS [J].

BEBB, HB .

PHYSICAL REVIEW, 1969, 185 (03) :1116-&

[4]

BRATTAIN WH, 1948, PHYS REV, V72, P345

[5] PHOTO-VOLTAGE INDUCED BY CAPTURE OF PHOTO-CARRIERS BY SURFACE TRAPS [J].

BUIMISTR.VM ;

GORBAN, AP ;

LITOVCHE.VG .

SURFACE SCIENCE, 1965, 3 (05) :445-&

[6] THEORY OF SMALL-SIGNAL PHOTOVOLTAGE AT SEMICONDUCTOR SURFACES [J].

FRANKL, DR ;

ULMER, EA .

SURFACE SCIENCE, 1967, 6 (01) :115-&

[7] OPTICAL SPECTRUM OF SEMICONDUCTOR SURFACE STATES FROM FRUSTRATED TOTAL INTERNAL REFLECTIONS [J].

HARRICK, NJ .

PHYSICAL REVIEW, 1962, 125 (04) :1165-&

[8] ELECTRONIC CHARACTERISTICS OF REAL CDS SURFACES [J].

LAGOWSKI, J ;

GATOS, HC ;

BALESTRA, CL .

SURFACE SCIENCE, 1972, 29 (01) :213-&

[9] PHOTOVOLTAGE INVERSION EFFECT RESULTING FROM A CONTINUOUS SPECTRUM OF SURFACE STATES - ZNO [J].

LAGOWSKI, J ;

SPROLES, ES ;

GATOS, HC .

SURFACE SCIENCE, 1972, 30 (03) :653-&

[10] PHOTOVOLTAGE INVERSION EFFECT AND ITS APPLICATION TO SEMICONDUCTOR SURFACE STUDIES - CDS [J].

LAGOWSKI, J ;

BALESTRA, CL ;

GATOS, HC .

SURFACE SCIENCE, 1971, 27 (03) :547-&

← 1 2 →