INFLUENCE OF DOPING ON THE BULK DIFFUSION OF LI INTO SI(100)

被引：17

作者：

ECKHARDT, M

KLEINE, H

FICK, D

机构：

[1] UNIV MARBURG, FACHBEREICH PHYS, D-35032 MARBURG, GERMANY

[2] UNIV MARBURG, WISSENSCH ZENTRUM MAT WISSENSCH, D-35032 MARBURG, GERMANY

来源：

SURFACE SCIENCE | 1994年 / 319卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(94)90585-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigated the adsorption of Li on the Si(100) surfaces of n- and p-type doped samples. Delta Phi and TDS measurements show the well known features for adsorption on the n-type sample, but unusual behaviour on the p-type one. A closer inspection clearly indicates strong bulk diffusion into the p-type sample. The dependence of the diffusion rate on the doping can be retraced to the solubility of Li in silicon which strongly depends on the acceptor concentration.

引用

页码：219 / 223

页数：5

共 8 条

[1] SILICON (111) AND (100) SURFACES AND THEIR INTERACTIONS WITH CS, K, NA AND LI - PHASE-CHANGES AND KINETICS OF DESORPTION STUDIED BY SURFACE-IONIZATION [J].