STRUCTURAL AND ELECTRICAL STUDY OF [AU/INP(100)] AND [AU/INSB/INP(100)] SYSTEMS

被引：19

作者：

BIDEUX, L ^{[1
]}

GRUZZA, B ^{[1
]}

PORTE, A ^{[1
]}

ROBERT, H ^{[1
]}

机构：

[1] UNIV CLERMONT FERRAND,ELECTR LAB,CNRS,URA 830,F-63177 CLERMONT FERRAND,FRANCE

来源：

SURFACE AND INTERFACE ANALYSIS | 1993年 / 20卷 / 09期

关键词：

D O I：

10.1002/sia.740200909

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The mechanisms for the formation of the systems [Au/InP(100)] and [Au/InSb/InP(200)] are connected with their electrical properties. By using quantitative AES, a precise knowledge of the atomic mechanisms allows us to perform the desired component such as a Schottky diode. The best results are obtained for the [Au/heated InSb/InP] system with a barrier height of 0.7 eV.

引用

页码：803 / 807

页数：5

共 16 条

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