ELECTROOPTIC SAMPLING EVALUATION OF 1.5-MU-M METAL-SEMICONDUCTOR-METAL PHOTODIODES BY SOLITON COMPRESSED SEMICONDUCTOR-LASER PULSES

被引：8

作者：

SAHARA, RT ^{[1
]}

TAKESHITA, H ^{[1
]}

MIWA, K ^{[1
]}

TSUCHIYA, M ^{[1
]}

KAMIYA, T ^{[1
]}

机构：

[1] UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1995年 / 31卷 / 01期

关键词：

D O I：

10.1109/3.341715

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An electrooptic sampling system using soliton compressed pulses from a gain switched laser diode was assembled and used to characterize an InGaAs metal-semiconductor-metal photodetector at the important optical fiber wavelength of 1.55 microns. The measured rise time of the photodiode pulse was 6.5 ps. The pump and probe pulses had a FWHM of 0.6 ps as measured by autocorrelation. The sampling system rise time was evaluated to be 2.0 ps, yielding the estimated intrinsic photodiode rise time of 2.3 ps. By introducing a differential detection scheme and optical filtering, a shot noise limited sensitivity of 0.6 mV/Sqrt[Hz] was achieved. These results represent the fastest rise time, and most sensitive semiconductor laser based, electrooptic sampling system reported to date.

引用

页码：120 / 125

页数：6

共 18 条

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ALEXANDROU S, 7 5 PS CRYSTALLINE S, P388

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