IMPEDANCE CHARACTERISTICS OF APPLIED-B ION DIODES

被引:40
作者
DESJARLAIS, MP
机构
关键词
D O I
10.1103/PhysRevLett.59.2295
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:2295 / 2298
页数:4
相关论文
共 12 条
[1]   THEORY OF INTENSE ION-BEAM ACCELERATION [J].
ANTONSEN, TM ;
OTT, E .
PHYSICS OF FLUIDS, 1976, 19 (01) :52-59
[2]   ONE-SPECIE AND 2-SPECIE EQUILIBRIA FOR MAGNETIC INSULATION IN COAXIAL GEOMETRY [J].
BERGERON, KD .
PHYSICS OF FLUIDS, 1977, 20 (04) :688-697
[3]   ELECTRON-DIFFUSION AND LEAKAGE CURRENTS IN MAGNETICALLY INSULATED DIODES [J].
DESJARLAIS, MP ;
SUDAN, RN .
PHYSICS OF FLUIDS, 1987, 30 (05) :1536-1552
[4]   STOCHASTIC ELECTRON MOTION IN MAGNETICALLY INSULATED DIODES [J].
DESJARLAIS, MP ;
SUDAN, RN .
PHYSICS OF FLUIDS, 1986, 29 (04) :1245-1257
[5]  
DRIEKE PL, 1977, J APPL PHYS, V47, P85
[6]   TIME-RESOLVED PROTON FOCUS OF A HIGH-POWER ION DIODE [J].
JOHNSON, DJ ;
LEEPER, RJ ;
STYGAR, WA ;
COATS, RS ;
MEHLHORN, TA ;
QUINTENZ, JP ;
SLUTZ, SA ;
SWEENEY, MA .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :12-27
[7]   APPLIED-B FIELD-ION DIODE STUDIES AT 3.5 TW [J].
JOHNSON, DJ ;
DREIKE, PL ;
SLUTZ, SA ;
LEEPER, RJ ;
BURNS, EJT ;
FREEMAN, JR ;
MEHLHORN, TA ;
QUINTENZ, JP .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2230-2241
[8]   IMPEDANCE SCALING OF APPLIED-B ION DIODES [J].
MILLER, PA .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (05) :1473-1477
[9]   ANALYTIC MODEL OF APPLIED-B ION DIODE IMPEDANCE BEHAVIOR [J].
MILLER, PA ;
MENDEL, CW .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :529-539
[10]   ELECTROMAGNETIC PARTICLE-IN-CELL SIMULATIONS OF APPLIED-B PROTON DIODES [J].
SLUTZ, SA ;
SEIDEL, DB ;
COATS, RS .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :11-18