SUBGAP ABSORPTION-SPECTRA OF ION-IMPLANTED SI AND GAAS-LAYERS

被引：13

作者：

LUCIANI, L

MARINELLI, M

ZAMMIT, U

PIZZOFERRATO, R

SCUDIERI, F

MARTELLUCCI, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 26期

关键词：

D O I：

10.1063/1.101941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2745 / 2747

页数：3

共 11 条

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[5] PHOTOACOUSTIC MONITORING OF DAMAGE IN ION-IMPLANTED AND ANNEALED SI LAYERS [J].

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MARTELLUCCI, S .

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[6]

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