EVALUATION OF THE CONSTANT PHOTOCURRENT METHOD FOR DETERMINING THE ENERGY-DISTRIBUTION OF LOCALIZED STATES IN DISORDERED SEMICONDUCTORS

被引:5
作者
MARSHALL, JM
PICKIN, W
HEPBURN, AR
MAIN, C
BRUGGEMANN, R
机构
[1] DUNDEE INST TECHNOL,DEPT ELECTR & ELECT ENGN,DUNDEE,SCOTLAND
[2] UNIV STUTTGART,INST PHYS ELEKTR,W-7000 STUTTGART 80,GERMANY
关键词
D O I
10.1016/S0022-3093(05)80126-7
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Numerical modelling is employed to explore the information which can be obtained from studies of the 'constant photocurrent' response for disordered semiconductors. Computer simulation is used to determine the experimental behaviour for a range of N(E) distributions of differing functional form. The results constitute input data to which two different interpretive techniques are applied, allowing an assessment of the viability and limitations of such procedures.
引用
收藏
页码:343 / 346
页数:4
相关论文
共 6 条
[1]  
CURTINS H, 1988, AMORPHOUS SILICON RE, P329
[2]  
HATA N, 1991, IN PRESS SPR P MAT R
[3]  
KOCKA J, 1988, AMORPHOUS SILICON RE, P329
[4]  
KURNIA D, 1990, THESIS U WALES
[5]   HOLE CARRIER DRIFT-MOBILITY MEASUREMENTS IN A-SI-H, AND THE SHAPE OF THE VALENCE-BAND TAIL [J].
MARSHALL, JM ;
STREET, RA ;
THOMPSON, MJ ;
JACKSON, WB .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (03) :387-397
[6]   DIRECT MEASUREMENT OF THE GAP STATES AND BAND TAIL ABSORPTION BY CONSTANT PHOTOCURRENT METHOD IN AMORPHOUS-SILICON [J].
VANECEK, M ;
KOCKA, J ;
STUCHLIK, J ;
TRISKA, A .
SOLID STATE COMMUNICATIONS, 1981, 39 (11) :1199-1202