ELECTROLUMINESCENCE AND ELECTRICAL PROPERTIES OF HIGH-PURITY VAPOR-GROWN GAP

被引:52
作者
CRAFORD, MG
GROVES, WO
HERZOG, AH
HILL, DE
机构
关键词
D O I
10.1063/1.1660618
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2751 / +
页数:1
相关论文
共 20 条
[1]   ABSORPTION AND LUMINESCENCE OF EXCITONS AT NEUTRAL DONORS IN GALLIUM PHOSPHIDE [J].
DEAN, PJ .
PHYSICAL REVIEW, 1967, 157 (03) :655-&
[2]   INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
THOMAS, DG .
PHYSICAL REVIEW, 1966, 150 (02) :690-&
[3]   GREEN ELECTROLUMINESCENCE FROM GALLIUM PHOSPHIDE DIODES NEAR ROOM TEMPERATURE [J].
DEAN, PJ ;
GERSHENZON, M ;
KAMINSKY, G .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) :5332-+
[4]   EFFECT OF DONOR CONCENTRATION ON GREEN ELECTROLUMINESCENCE FROM GALLIUM PHOSPHIDE DIODES [J].
DIERSCHKE, EG ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :321-+
[5]   TEMPERATURE BEHAVIOR OF STIMULATED EMISSION DELAYS IN GAAS DIODES AND A PROPOSED TRAPPING MODEL [J].
DYMENT, JC ;
RIPPER, JE .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (04) :155-+
[6]   ROOM TEMPERATURE GREEN ELECTROLUMINESCENT DIODES PREPARED FROM N-TYPE VAPOUR GROWN EPITAXIAL GALLIUM PHOSPHIDE [J].
EPSTEIN, AS .
SOLID-STATE ELECTRONICS, 1969, 12 (06) :485-&
[7]   ELECTROLUMINESCENT RECOMBINATION NEAR THE ENERGY GAP IN GAP DIODES [J].
GERSHENZON, M ;
MIKULYAK, RM ;
LOGAN, RA ;
FOY, PW .
SOLID-STATE ELECTRONICS, 1964, 7 (02) :113-124
[8]   FREE-CARRIER AND EXCITON RECOMBINATION RADIATION IN GAAS [J].
GILLEO, MA ;
BAILEY, PT ;
HILL, DE .
PHYSICAL REVIEW, 1968, 174 (03) :898-&
[9]  
GROVES WO, 1967, CRYST GROWTH, P669
[10]  
HAYNES JR, 1965, 1964 P S RAD REC PAR, P21